355nm激光曝光SU-8胶的XPS谱和FT-IR谱研究

SU-8光胶因具有良好的光刻性能,并可获得稳定的高深宽比而在微加工领域得到了广泛的应用。众多研究采用不同的光源对其进行了多种光刻研究,本文应用355nm激光对SU-8胶进行曝光,分别采用XPS谱和FT-IR谱分析了SU-8胶与激光相互作用过程中,355nm激光对SU-8胶的作用以及反应前后主要成分含量、分子结构的变化,初步探讨了SU-8胶中激光曝光能量与透入深度的关系。

Study of SU-8 resist for 355nm laser Lithography by X-ray Photoelectron Spectroscopy and Fourier Transform Infrared Spectroscopy

There is a widespread availability of a photoresist named SU-8 in the microelectromechanical systems(MEMS),this is duo to its outstanding lithographic performance and its ability for use in the fabrication of stable structures with very high aspect ratio.Various lithographic studies on SU-8 have been performed using a variety of light sources.In this paper,we use 355nm laser as SU8 lithography,study it respectively by X-ray photoelectron spectroscopy(XPS) and fourier transform infrared(FT-IR) spectroscopy.The effect,the percentage composition and molecular constitution of the SU-8 resist for 355 nm laser lithography are obtained.The paper also make a first study of the relation between the laser exposure dose and the penetrating depth.