| 电子束蒸发制备氮化硼薄膜的红外光谱研究 |
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| 引用本文： | 邓金祥,郭清秀,崔敏,赵卫平,杨冰,杨萍.电子束蒸发制备氮化硼薄膜的红外光谱研究[J].光散射学报,2009,21(4):309-311. |
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| 作者姓名： | 邓金祥 郭清秀 崔敏 赵卫平 杨冰 杨萍 |
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| 作者单位： | 北京工业大学应用数理学院,北京,100124 |
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| 基金项目： | 国家自然科学基金，北京市自然科学基金，北京市属市管高等学校人才强教计划资助项目，北京市教委资助项目，教育部门学回国人员科研启动基金 |
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| 摘 要： | 用电子束蒸发法制备氮化硼薄膜, 分别研究束流大小和蒸发时间长短对薄膜质量的影响, 薄膜以红外吸收光谱标识。实验结果表明, 束流大小和蒸发时间长短对薄膜质量都有影响, 经过900℃氮气保护退火后, 都得到了高立方相含量的氮化硼薄膜。
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| 关 键 词： | 氮化硼薄膜 电子束蒸发 红外光谱 |
| 收稿时间： | 2009/5/30 |
IR Spectra Characteristics of Boron Nitride Thin Films Deposited by Electron Beam Evaporation |
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| DENG Jin-xiang,GUO Qing-xiu,CUI Min,ZHAO Wei-ping,YANG Bing,YANG Ping.IR Spectra Characteristics of Boron Nitride Thin Films Deposited by Electron Beam Evaporation[J].Chinese Journal of Light Scattering,2009,21(4):309-311. |
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| Authors: | DENG Jin-xiang GUO Qing-xiu CUI Min ZHAO Wei-ping YANG Bing YANG Ping |
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| Institution: | DENG Jin-xiang*,GUO Qing-xiu,CUI Min,ZHAO Wei-ping,YANG Bing,YANG Ping(School of Applied Physics and Mathematics,Beijing University of Technology,Beijing 100124,China) |
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| Abstract: | Boron nitride thin films were deposited by electron beam evaporation.The electron beam flux and deposition time were changed independently.Then films were annealed at 900℃for l hour under N2 protection.The Boron nitride films were characterized by IR Spectra.The boron nitride thin films with large cubic phase content were obtained. |
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| Keywords: | Boron nitride thin films Electron beam evaporation IR Spectra |
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