| BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文) |
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| 引用本文： | LIU Li-feng GUO Hai-zhong LU Hui-bin,CHEN Zheng-hao.BaNb_xTi_(1-x)O_3薄膜的电学性质及结构相变(英文)[J].光散射学报,2005,17(1):27-28. |
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| 作者姓名： | LIU Li-feng GUO Hai-zhong LU Hui-bin CHEN Zheng-hao |
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| 作者单位： | Beijing National Laboratory for Condensed Matter Physics，Institute of Physics，Chinese Academy of Sciences，Beijing 10008，China |
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| 摘 要： | 我们利用激光分子束外延设备(L MBE)在MgO上外延生长了一系列BaNbxTi1-xO3(0
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| 关 键 词： | 钙钛矿氧化物薄膜 小极化子 金属-绝缘体转变 |
Electrical Properties and Structural Phase Transitions in BaNbxTi1-xO3 Thin Films |
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| LIU Li-feng,GUO Hai-Zhong,LU Hui-bin,CHEN Zheng-Hao.Electrical Properties and Structural Phase Transitions in BaNbxTi1-xO3 Thin Films[J].Chinese Journal of Light Scattering,2005,17(1):27-28. |
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| Authors: | LIU Li-feng GUO Hai-Zhong LU Hui-bin CHEN Zheng-Hao |
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| Abstract: | Thin films ofBaNbxTi1-xO3 (0＜x≤0.5) were epitaxially grown onMgO substrates by laser molecular beam epitaxy (L-MBE). The thin films undergo tetragonalto cubic and semiconductor to metal transitions with Nb concentrations as shown by thex-ray diffraction, Raman spectroscopy and electrical resistivity measurements. Roomtemperature resistivities are found to decrease monotonously with increasing Nbconcentration and range from 101 to 10-4 Ω.cm. The fact that the temperature dependence of resistivity of thethin films can be fitted well using small polaron model reveals the polaronic nature ofthe charge carriers in the thin films. This conclusion is further confirmed by theexistence of localized states within the band gap of the BaTiO3 as revealed by thesynchrotron radiation-based ultraviolet photoelectron spectroscopy. |
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| Keywords: | perovskite thin films small polaron metal-insulator transition |
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