| Si基GaN的微结构表征 |
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| 引用本文： | 江若琏,陈鹏,赵作明,沈波,张荣,郑有炓.Si基GaN的微结构表征[J].光散射学报,2003,15(4):264-267. |
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| 作者姓名： | 江若琏 陈鹏 赵作明 沈波 张荣 郑有炓 |
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| 作者单位： | 南京大学物理系,南京,210093 |
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| 基金项目： | 国家自然科学基金资助课题(60276031,60136020)，国家重点基础研究规划项目(G20000683) |
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| 摘 要： | 采用快速辐射加热/低压-金属有机化学气相淀积(RTP/LP-MOCVD)方法分别以AlN和阳极氧化铝为缓冲层材料在Si衬底上外延生长GaN薄膜,通过X射线衍射谱(XRD)、光荧光谱(PL)、拉曼散射谱(RamanScattering)等手段对它们的微结构进行了表征和分析,结果指出AlN是优良的缓冲层材料。
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| 关 键 词： | GaN 微结构 缓冲层 X射线衍射谱 光荧光谱 拉曼散射谱 |
| 文章编号： | 1004-5929(2003)04-0264-04 |
| 收稿时间： | 2003/7/22 |
| 修稿时间： | 2003年7月22日 |
Characterization for Microstructure of GaN on Si Substrates |
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| JIANG Ruo-lian,CHEN Pen,ZHAO Zuo-ming,SHEN Bo,ZHANG Rong,ZHENG You-dou.Characterization for Microstructure of GaN on Si Substrates[J].Chinese Journal of Light Scattering,2003,15(4):264-267. |
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| Authors: | JIANG Ruo-lian CHEN Pen ZHAO Zuo-ming SHEN Bo ZHANG Rong ZHENG You-dou |
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| Institution: | JIANG Ruo-lian~*,CHEN Pen,ZHAO Zuo-ming,SHEN Bo,ZHANG Rong,ZHENG You-dou |
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| Abstract: | Using AlN and anodic alumina as the respective buffer layers, GaN films on Si (111) were grown by rapid thermal process/low pressure-metalorganic chemical vapor deposition (RTP/LP-MOCVD). Crystal structures of the GaN epilayers were characterized by X-ray diffraction (XRD), photoluminescence (PL) and Raman scattering. Results indicate that AlN is a good buffer material between Si and GaN. |
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| Keywords: | GaN microstructure buffer layer X-ray diffraction photoluminescence spectroscopy Raman scattering |
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