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Raman散射和AFM对多晶硅薄结晶状况的研究
引用本文:李瑞,卢景霄,陈永生,杨仕娥,靳锐敏,王海燕,张宇翔,郜小勇.Raman散射和AFM对多晶硅薄结晶状况的研究[J].光散射学报,2005,17(2):142-147.
作者姓名:李瑞  卢景霄  陈永生  杨仕娥  靳锐敏  王海燕  张宇翔  郜小勇
作者单位:郑州大学,材料物理教育部重点实验室,郑州,450052
摘    要:采用等离子体增强化学气相沉积(PECVD)法在普通玻璃衬底上制备了多晶硅(p-si)薄膜。利用拉曼(Raman)散射谱、原子力显微镜(AFM)研究了衬底温度、射频功率和SiH4浓度对薄膜晶化的影响,并对其结果进行分析讨论。研究结果表明,当衬底温度从200℃逐渐提高到400℃、SiH4浓度从5%降到1%,硅膜的晶化率逐渐提高,结构逐渐由非晶向多晶转变,射频功率对薄膜的晶化状况也有很大影响。

关 键 词:多晶硅薄膜  等离子增强化学气相沉积(PECVD)  Raman散射  原子力显微镜(AFM)
文章编号:1004-5929(2005)02-0142-06
收稿时间:2005/1/9
修稿时间:2005年1月9日

Crystallization Analysis of Poly-Si Thin Filmsby Raman Scattering and AFM
LI Rui,LU Jing-xiao,CHEN Yong-sheng,YANG Shi-e,JIN Rui-min,WANG Hai-yan,ZHANG Yu-xiang,GAO Xiao-yong.Crystallization Analysis of Poly-Si Thin Filmsby Raman Scattering and AFM[J].Chinese Journal of Light Scattering,2005,17(2):142-147.
Authors:LI Rui  LU Jing-xiao  CHEN Yong-sheng  YANG Shi-e  JIN Rui-min  WANG Hai-yan  ZHANG Yu-xiang  GAO Xiao-yong
Abstract:The poly-crystalline silicon thin films were deposited on common glass substrates by using the PECVD (Plasma-enhanced chemical vapor deposition) method. The effect of sub- strate temperature, RF power and SiH4dilution on the film crystalization were investigated by means of laser Raman scattering (LRS) and atomic force microscopy (AFM). The results show that, when the temperature is increased from 200℃to 400℃or the SiH4dilution is decreased from 5% to 1%, the volume fractions of P-Si in films become larger and the transition from amorphous to poly-crystalline begins.
Keywords:Poly-Si thin films  Plasma-enhanced chemical vapor deposition  Raman scatter- ing  Atomic force microscopy
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