利用纳米GaP固体材料的拉曼光谱计算其微结构参数 |
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引用本文: | 张兆春,邹陆军,崔得良.利用纳米GaP固体材料的拉曼光谱计算其微结构参数[J].光散射学报,2003,15(2):82-85. |
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作者姓名: | 张兆春 邹陆军 崔得良 |
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作者单位: | 1. 上海大学材料科学与工程学院,上海,200072 2. 山东大学晶体材料研究所,济南,250100 |
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基金项目: | 江苏省自然科学基金(BK99082)资助项目 |
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摘 要: | 利用纳米GaP固体材料拉曼光谱的类横向光学模峰移(ΔωTO)对其均方根键角畸变(Δθ)和平均键畸变能(Uθ)进行了计算。计算结果表明:当成型压力增加时,纳米GaP固体材料的Δθ和Uθ均增加;而将纳米GaP固体材料在325℃进行1h热处理后,其Δθ和Uθ并没有明显的变化。
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关 键 词: | 纳米 GaP 拉曼光谱 均方根键角畸变 平均键畸变能 |
文章编号: | 1004-5929(2003)02-0082-04 |
收稿时间: | 2003/3/17 |
修稿时间: | 2003年3月17日 |
Determination of Parameters of Micro-structure in GaP Nano-materials by Raman Scattering |
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Abstract: | The calculation of the root mean square bond angle distribution, Δθ, and the mean stored energy, Uθ, by the TOlike mode, ωTO, from Raman spectra of GaP nanomaterials has been carried out. It has been demonstrated that both Δθ and Uθ were increased with the increase of compaction pressure. However, Δθ and Uθ were slowly varied for the GaP nanomaterial heattreated at 325℃ for 1 hr, in comparison with the unheated GaP nanomaterial sample. |
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Keywords: | Nano-material Gallium Phosphide Raman Spectra Root mean square bond angle distribution Mean stored energy |
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