Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation |
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| Authors: | V V Privezentsev V A Skuratov V S Kulikauskas A V Makunin S V Ksenich E A Steinman A N Tereshchenko A V Goryachev |
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| Institution: | 1.Institute of Physics and Technology,Russian Academy of Sciences,Moscow,Russia;2.Joint Institute for Nuclear Research,Dubna, Moscow oblast,Russia;3.National Research Nuclear University “MEPhI”,Moscow,Russia;4.Skobeltsyn Institute of Nuclear Physics,Moscow State University,Moscow,Russia;5.National University of Science and Technology “MISiS”,Moscow,Russia;6.Institute of Solid State Physics,Russian Academy of Sciences,Chernogolovka, Moscow oblast,Russia;7.National Research University of Electronic Technology “MIET”,Zelenograd, Moscow,Russia |
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| Abstract: | 50 keV 64Zn+ ions to a dose of 5 × 1016 cm–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV 132Xe26+ ions with a fluence ranging from 1 ×1012 up to 5 × 1014 cm–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence. |
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