Photoluminescence kinetics of structures with InAs quantum dots for IR photodetectors |
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| Authors: | L V Gavrilenko V M Danil’tsev M N Drozdov D I Kuritsyn L D Moldavskaya |
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| Institution: | 1. Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhni Novgorod, 603950, Russia
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| Abstract: | The experimental results of a photoluminescence kinetics study of InAs/GaAs structures with quantum dots grown by metal-organic vapor-phase epitaxy are shown. The measurements have revealed the fast capture of excited carriers from the GaAs barrier to quantum dots and slow interlevel relaxation inside the quantum dots. |
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