Structure and radiation properties of dislocations arising during oxygen precipitate growth in silicon

The structural and radiation properties of defects formed during oxygen precipitation in Czochralski-grown silicon (Cz-Si) has been investigated by the methods of transmission electron microscopy (TEM) and photoluminescence (PL). It has been shown that the spectral intensity of dislocation-related luminescence (DL) is considerably redistributed as precipitates grow. A comparison of the concentration of different types defects with the DL integral intensity has shown that the secondary defects, namely, dislocations punched out of precipitates, make a main contribution to DL. In this case, the spectral distribution and integral intensity of DL are related to the extension of dislocation loops. The results show the capability of optimization of the dislocation-generation process to increase the intensity of the D1 line for its use in optoelectronics.