Study of the effect of irradiation with the SEM electron beam on cathodoluminescence and the induced current in InGaN/GaN structures with multiple quantum wells |
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| Authors: | P S Vergeles N M Shmidt E B Yakimov |
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| Institution: | (1) Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore, 117602, Singapore;(2) Singapore-MIT Alliance, National University of Singapore, 4 Engineering Drive 3, Singapore, 117576, Singapore |
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| Abstract: | The effect of irradiation with low-energy electrons on the optical and electric properties of InGaN/GaN-based LED structures
with multiple quantum wells is studied using the methods of cathodoluminescence (CL) and electron-beam induced current (EBIC).
It is shown that such irradiation leads to a change in both the electric and optical properties of these structures. The fitting
of the dependences of the induced-current signal on the beam energy makes it possible to show that irradiation leads to the
suppression of the recombination in the upper p-GaN layer, to a decrease in the probability of transition of charge carriers through the active region of the structure with
quantum wells, and to a increase in the effective concentration of donors in the active region. These changes make it possible
to explain the increase in the integral CL intensity, but it does not explain the change in its spectrum |
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