| Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers |
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| 作者姓名： | 毕大炜 张正选 张帅 陈明 余文杰 王茹 田浩 刘张李 |
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| 作者单位： | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| 基金项目： | Supported by Major State Basic Research Development Program |
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| 摘 要： | The total dose radiation response of pseudo-MOS transistors fabricated in hardened and unhardened FD （fully-depleted） SIMOX （Separation by Implanted Oxygen） SOI （Silicon-on-insulator） wafers is presented. At 1 Mrad（Si） radiation dose, the threshold voltage shift of the pseudo-MOS transistor is reduced from -115.5 to -1.9 V by the hardening procedure. The centroid location of the net positive charge trapped in BOX, the hole-trap density and the hole capture fraction of BOX are also shown. The results suggest that hardened FD SIMOX SOI wafers can perform well in a radiation environment.
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| 关 键 词： | MOS晶体管 氧离子注入 SOI晶片 辐射响应 全耗尽 强化 制造 阈值电压漂移 |
| 收稿时间： | 2008-12-22 |
| 修稿时间： | 2009-1-22 |
Radiation response of pseudo-MOS transistors fabricated in hardened fully-depleted SIMOX SOI wafers |
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| BI Da-Wei,ZHANG Zheng-Xuan,ZHANG Shuai,CHEN Ming,YU Wen-Jie,WANG Ru,TIAN Hao,LIU Zhang-Li.Radiation response of pseudo-MOS transistors fabricated in hardenedfully-depleted SIMOX SOI wafers[J].High Energy Physics and Nuclear Physics,2009,33(10):866-869. |
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| Authors: | BI Da-Wei ZHANG Zheng-Xuan ZHANG Shuai CHEN Ming YU Wen-Jie WANG Ru TIAN Hao LIU Zhang-Li |
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| Institution: | The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China |
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| Abstract: | SOI, pseudo-MOS transistor, total dose radiation, ion implantation |
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| Keywords: | SOI pseudo-MOS transistor total dose radiation ion implantation |
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