首页 | 本学科首页   官方微博 | 高级检索  
     检索      

质子和1MeV中子在硅中能量沉积的模拟计算
引用本文:陈世彬,张义门,陈雨生,黄流兴,张玉明.质子和1MeV中子在硅中能量沉积的模拟计算[J].中国物理 C,2001,25(4):365-370.
作者姓名:陈世彬  张义门  陈雨生  黄流兴  张玉明
作者单位:[1]西北核技术研究所,西安710024 [2]西安电子科技大学微电子所,西安710071
基金项目:国防科技预研基金!资助&&
摘    要:在现有中子截面数据和粒子与物质相互作用的理论基础上,编写了计算中子非电离能量损失(NIEL)和电离能量损失(IEL)程序,利用该程序和引进的TRIM95程序计算了1MeV中子和质子在硅中IEL和NIEL的大小和分布等,并对计算结果进行了分析和比较.

关 键 词:中子损伤  计算机模拟  蒙特卡罗  能量沉积
收稿时间:2000-3-16

Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon
CHEN Shi Bin , ZHANG Yi Men\ CHEN Yu Sheng HUANG Liu Xing \ ZHANG Yu Ming.Simulation of Energy Deposition of Protons and 1MeV Neutrons in Silicon[J].High Energy Physics and Nuclear Physics,2001,25(4):365-370.
Authors:CHEN Shi Bin  ZHANG Yi Men\ CHEN Yu Sheng HUANG Liu Xing \ ZHANG Yu Ming
Institution:CHEN Shi Bin 1,2 ZHANG Yi Men1\ CHEN Yu Sheng 2 HUANG Liu Xing 2\ ZHANG Yu Ming 1 1
Abstract:Based on existing cross section data and general theories, a Monte Carlo computer program named NEUTRON for calculating non ionizing energy loss (NIEL) and ionizing energy loss (IEL) of neutrons in materials was written. The amount of IEL & NIEL and their distributions irradiation induced by 1MeV neutrons and protons in common semiconductor material Si were calculated with NEUTRON and introduced TRIM95, respectively. These results were analyzed and compared with literatures.
Keywords:neutron damage  computer simulation  Monte  Carlo  energy deposition  
本文献已被 CNKI 维普 万方数据 等数据库收录!
点击此处可从《中国物理 C》浏览原始摘要信息
点击此处可从《中国物理 C》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号