The electric field effects on intersubband optical absorption of Si δ-doped GaAs layer |
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Authors: | Emine Ozturk Ismail Sokmen |
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Institution: | a Department of Physics, Cumhuriyet University, 58140 Sivas, Turkey b Department of Physics, Dokuzeylul University, Izmir, Turkey |
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Abstract: | The intersubband transitions in Si δ-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the Schrödinger and Poisson equations self-consistently. From our calculations, it is found that the subband energies and intersubband optical absorption is quite sensitive to the applied electric field. This gives a new degree of freedom in various device applications based on the intersubband transitions of electrons. |
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Keywords: | 73 90 +f |
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