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Tunable band structure in diamond-cubic tin-germanium alloys grown on silicon substrates |
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| Authors: | Matthew R BauerJohn Tolle Corey BungayAndrew VG Chizmeshya David J Smith José Menéndez John Kouvetakis |
| Institution: | a Department of Chemistry and Biochemistry, Arizona State University, Tempe, AZ 85287-1604, USA b J. A. Woollam Co., Inc., 645 M Street, Lincoln, NE 68508, USA c Center for Solid State Science, Arizona State University, Tempe, AZ 85287-1704, USA d Department of Physics and Astronomy, Arizona State University, Tempe, AZ 85287-1504, USA |
| Abstract: | Novel chemical methods based on deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow SnxGe1−x alloys directly on silicon. Device-quality, strain-free films with a Sn-fraction as high as x=0.2 were obtained. The optical properties provide evidence for a well-defined Ge-like band structure. In particular, the direct band gap E0 is reduced to a value as low as 0.41 eV for Sn0.14Ge0.86. The growth of these high-optical quality infrared materials creates entirely new opportunities for band gap engineering on Si. |
| Keywords: | 78 20 Ci 81 15 Kk 71 55 Cn |
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