Critical point transitions of wurtzite indium nitride |
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| Institution: | 1. Laboratory of Condensed Matter Spectroscopy and Opto-Electronic Physics, Department of Physics, Shanghai Jiao Tong University, 1954 Hua Shan Road, Shanghai 200030, People''s Republic of China;2. Department of Electrical and Electronic Engineering, Faculty of Science, and Engineering, Saga University, Saga 840-8502, Japan;1. Department of Chemical Engineering, National Taiwan University of Science and Technology, Taipei 10617, Taiwan;2. Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan;3. Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan;1. Department of Electrical and Electronics Information Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan;2. Electronics-Inspired Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan;1. Departamento de Química, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS, Brazil;2. Departamento de Física, Universidade Federal de Santa Maria, 97105-900, Santa Maria, RS, Brazil;3. Departamento de Ciencias Físicas, Universidad Andres Bello, República 220, 837-0134 Santiago, Chile;4. Instituto de Física, Universidade Federal de Uberlândia, 38408-100, Uberlândia, MG, Brazil |
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| Abstract: | The optical transmission, photoluminescence, and reflection spectra have been measured on a high-quality wurtzite indium nitride (InN) single crystal in the range of 0.5–20.0 eV. The fundamental bandgap of intrinsic InN has been extracted by taking into account the Burstein–Moss shift, bandgap renormalization and Urbach band tail effects, and found to be very close to the recent strongly re-established value of ∼1.2 eV. With the aid of Adachi's dielectric function model for the vacuum ultraviolet reflection spectra and the empirical pseudopotential method approach for the electron band-structure, we are able to identify up to nine electronic transitions, showing clear picture for the critical point transitions in InN. The temperature dependence of these interband transitions has also been revealed. |
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