Structural, magnetic properties and photoemission study of Ni-doped ZnO |
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| Authors: | Zhigang Yin Nuofu Chen Shulin Song Jun Zhong Kurash Ibrahim |
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| Institution: | a Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China
b Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039, China |
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| Abstract: | Nickel-doped ZnO (Zn1−xNixO) have been produced using rf magnetron sputtering. X-ray diffraction measurements revealed that nickel atoms were successfully incorporated into ZnO host matrix without forming any detectable secondary phase. Ni 2p core-level photoemission spectroscopy confirmed this result and suggested Ni has a chemical valence of 2+. According to the magnetization measurements, no ferromagnetic but paramagnetic behavior was found for Zn0.86Ni0.14O. We studied the electronic structure of Zn0.86Ni0.14O by valence-band photoemission spectroscopy. The spectra demonstrate a structure at ∼2 eV below the Fermi energy EF, which is of Ni 3d origin. No emission was found at EF, suggesting the insulating nature of the film. |
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| Keywords: | 75 50 Pp 81 15 Cd 79 60 Bm |
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