Resonant Raman scattering of CdCr2Se4 |
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Authors: | M Iliev G Güntherodt H Pink |
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Institution: | Max-Planck-Institut für Festkörperforschung, 7 Stuttgart 80, Federal Republic of Germany;Forschungslaboratorien der Siemens AG 8000 München 80, Federal Republic of Germany |
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Abstract: | The scattering cross section of the Raman-active phonons at 156 cm?1 (Eg) and 169 cm?1 (F2g) in the ferromagnetic semiconductor CdCr2Se4 (Tc=130 K) has been measured as a function of incident photon energy between 1.55 and 2.81 eV, both in the ferromagnetic and paramagnetic phases. The resonance curve peaks sharply near 2 eV and shows a broadening for temperatures below the Curie point. The relative line intensities change significantly with photon energy. The results show that the concept of spin-dependent Raman scattering in the ferromagnetic spinels has to be revised in terms of exchange-splitting-induced resonant Raman scattering. |
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