Ion beam deposition of a-Si:H |
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Authors: | GP Ceasar SF Grimshaw K Okumura |
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Institution: | Xerox Webster Research Center Webster, New York 14580, USA |
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Abstract: | The ion beam deposition (IBD) of hydrogenated amorphous silicon is described. Hydrogen incorporation and bonding with the silicon network is evident from SIMS and infrared spectra; the latter show absorption bands centered at 2000cm?1 and 630cm?1 typical of monosilicon hydride bonding. IBD a-Si:H thin films are found to be free of microvoids and trace metallic impurities. Four probe conductivity measurements show that the ion beam deposition process yields high resistivity, hydrogenated amorphous silicon (?≥109Ωcm). All of these measurements suggest a low density of defects states in the band gap. |
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