Detection of deep centers in semiconductors by strain modulated electron spin resonance: Pt+ in si |
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Authors: | JCM Henning ECJ Egelmeers |
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Institution: | Philips Research Laboratories, Eindhoven, The Netherlands |
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Abstract: | Strain-modulated ESR of p+-type silicon, doped with Pt (1.4 × 1017 Pt cm-3) reveals a spectrum, characteristic of a triplet state. It is tentatively attributed to Pt+?Pt+ pairs. The g-factor (g = 1.94±0.01) is isotropic and extremely sensitive to strain: if we write δg = Fε we find ∥F∥? 2×104 as an order of magnitude estimate. The exchange coupling is ferromagnetic and predominantly isotropic. |
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