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Gate driven adiabatic quantum pumping in graphene
Authors:E Prada  P San-Jose
Institution:
  • a Instituto de Ciencia de Materiales de Madrid (CSIC), Cantoblanco, E-28049 Madrid, Spain
  • b Instituto de Estructura de la Materia (CSIC), Serrano 123, E-28006 Madrid, Spain
  • c Department of Physics, Lancaster University, Lancaster LA1 4YB, UK
  • Abstract:We propose a new type of quantum pump made out of graphene, adiabatically driven by oscillating voltages applied to two back gates. From a practical point of view, graphene-based quantum pumps present advantages as compared to normal pumps, like enhanced robustness against thermal effects and a wider adiabatic range in driving frequency. From a fundamental point of view, apart from conventional pumping through propagating modes, graphene pumps can tap into evanescent modes, which penetrate deeply into the device as a consequence of chirality. At the Dirac point the evanescent modes dominate pumping and give rise to a universal response under weak driving for short and wide pumps, even though the charge per unit cycle is not quantized.
    Keywords:A  Thin fims  A  Metals  B  Nanofabrications  D  Electronic transport
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