Diameter-dependent electrical transport properties of bismuth nanowire arrays |
| |
Authors: | Liang Li Youwen Yang Xiaosheng Fang Mingguang Kong Guanghai Li Lide Zhang |
| |
Institution: | Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, PR China |
| |
Abstract: | Single-crystalline bismuth nanowire arrays with different diameters were fabricated within porous anodic alumina membranes with the same pore size using the pulsed electro-deposition technique. X-ray diffraction measurements show that the as-synthesized nanowires have a highly preferential orientation. Scanning electron microscopy, transmission electron microscopy and high-resolution transmission electron microscopy analyses indicate that bismuth nanowire arrays are high filling, ordered and single-crystalline. Electrical resistance measurements show that the bismuth nanowires have a metal-semiconductor transition when the diameters decrease from 90 to 50 nm, and the resistance behaviors are explained on the basis of the quantum confinement effect and Matthiessen’s rule. |
| |
Keywords: | 73 63 Bd 67 55 Hc 81 05 Bx |
本文献已被 ScienceDirect 等数据库收录! |