Exciton tunnelling in ZnCdSe quantum well/CdSe quantum dots |
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| Authors: | Hua Jin Li-Gong Zhang Zhu-Hong Zheng Xiang-Gui Kong De-Zhen Shen |
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| Institution: | Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033, China |
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| Abstract: | Exciton tunnelling through a ZnSe barrier layer of various thicknesses is investigated in a Zn0.72Cd0.28Se/CdSe coupled quantum well/quantum dots (QW/QDs) structure using photoluminescence (PL) spectra and near resonant pump-probe technique. Fast exciton tunnelling from quantum well to quantum dots is observed by transient differential transmission. The tunnelling time is 1.8, 4.4 and 39 ps for barrier thickness of 10, 15 and 20 nm, respectively. |
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| Keywords: | 78 67 Hc 71 35 Cc 73 40 Gk 82 53 Mj |
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