Size effect on SrRuO3/BaTiO3/SrRuO3 ferroelectric ultrathin film capacitor |
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| Authors: | H Wu YG Zhan HZ Xing WZ Shen |
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| Institution: | 1. Institute of Physics, ASCR, Na Slovance 2, 182 21 Prague 8, Czech Republic;2. Charles University, Faculty of Mathematics Physics, Department of Condensed Matter Physics, Ke Karlovu 5, 121 16 Prague 2, Czech Republic;1. Central Metallurgical Research and Development Institute, P.O. Box: 87 Helwan, Cairo, Egypt;2. Institut Européen des Membranes, UMR 5635 ENSCM UM CNRS, Université Montpellier, Place Eugène Bataillon, 34095 Montpellier, France;1. Dipartimento di Scienze Chimiche, Universita'' Catania, ISTM-CNR, and INSTM UdR Catania, Viale A. Doria 6, I-95125 Catania Italy;2. Istituto per la Microelettronica e Microsistemi, IMM-CNR, Strada VIII n. 50, 95121 Catania Italy;1. Universidad Nacional de Colombia, Campus Medellín, Facultad de Minas, Laboratorio de Caracterización de Materiales, A.A. 568, Medellín, Colombia;2. Institute for Solid State Physics, Karlsruhe Institute of Technology, P. O. Box 3640, Karlsruhe Germany;3. Universidad Nacional de Colombia, Campus Medellín, Facultad de Ciencias, Departamento de Física, Laboratorio de Materiales Cerámicos y Vítreos, A.A. 568, Medellín, Colombia |
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| Abstract: | We have carried out a detailed investigation on the size effect on SrRuO3/BaTiO3/SrRuO3 ferroelectric ultrathin film capacitors with film thickness fully strained with a SrTiO3 substrate. We employ the transverse field Ising model, taking into account the incomplete charge compensation of the realistic SrRuO3 electrode and the misfit strain imposed by the SrTiO3 substrate in the Hamiltonian, to quantitatively explain the experimental observation in the literature. It is found that BaTiO3 ultrathin films between two metallic electrodes lose their ferroelectric properties below a critical thickness of about 4.17 nm due to the enhancement of the quantum effect under the influence of the incomplete charge compensation of the electrode. |
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