Theory of spin-dependent recombination in semiconductors |
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| Authors: | R Haberkorn W Dietz |
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| Institution: | Institut für Physikalische und Theoretische Chemie, Technische Universität München, D-8046 Garching, West Germany |
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| Abstract: | The pair model of spin-dependent recombination of carriers in semiconductors, as discussed by Kaplan, Solomon and Mott, is solved exactly in several limiting cases. The model accounts for the large influence of a saturating microwave field in ESR experiments on recombination in crystalline and amorphous silicon. Further, the effect of a static magnetic field on recombination is explored. |
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