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Crystallization of amorphous Ge2Sb2Te5 films induced by a single femtosecond laser pulse |
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| Authors: | Guangjun Zhang Donghong Gu Qingxi Chen |
| Institution: | a Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai Jiading District, P.O. Box 800-211, Shanghai 201800, People's Republic of China b Photon Craft Project, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, P.O. Box 800-211, Shanghai 201800, People's Republic of China c Graduate of the Chinese Academy of Sciences, People's Republic of China |
| Abstract: | Crystallization is achieved in amorphous Ge2Sb2Te5 films upon irradiation with a single femtosecond laser pulse. Transmission electron microscopy images evidence the morphology of the crystallized spot which depends on the fluence of the femtosecond laser pulse. Fine crystalline grains are induced at low fluence, and the coarse crystalline grains are obtained at high fluence. At the damage fluence, ablation of the films occurs. |
| Keywords: | 68 55Jk 81 40Ef 61 10Ne |
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