InAs QDs on InP: polarization insensitive SOA and non-radiative Auger processes |
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Authors: | J Even L Pedesseau F Dore S Boyer-Richard |
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Institution: | 1. FOTON UMR6082, CNRS, INSA Rennes, Campus Beaulieu, 35042, Rennes Cedex, France
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Abstract: | An efficient mechanical and electronic axial approximation of the strained 8 × 8 Hamiltonian is proposed for zinc-blende nanostructures with a cylindrical shape on (100) substrates. Vertically stacked InAs/InP columnar quantum dots (CQDs) for polarization insensitive semiconductor optical amplifier (SOA) in telecommunications applications are studied theoretically. Non-radiative Auger processes in InAs/InP quantum dots (QDs) are also investigated. It is shown that a multiband approach is necessary in both cases. |
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