Ultrafast all-optical modulation by near-infrared intersubband transition in n-doped InGaAs/AlAsSb quantum wells |
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| Authors: | A Neogi H Yoshida T Mozume N Georgiev T Akiyama A Tackeuchi O Wada |
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| Institution: | 1. The Femtosecond Technology Research Association, 5-5 Tokodai, Tsukuba, 300-2635, Japan
2. New Energy and Industrial Research Development Organization, 1-1-3 Higashi, Ikebukuro, Tokyo 170, Japan
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| Abstract: | We demonstrate the ultrafast modulation of interband (IB)-resonant light (1.0–1.1 μm) by near-infrared intersubband (ISB)-resonant light (1.55–1.9 μm) in n-doped InGaAs/AlAsSb multiple quantum wells (QWs) using non-degenerate pump–probe spectroscopy. A modulation with an absorption recovery time of 1.0–2.0 ps has been observed in a planer-type modulation device due to ultrafast ISB relaxation of the carriers. The IB carrier relaxation process in the absence of an ISB-resonant light has also been investigated by time-resolved photoluminescence (PL) measurement. The modulation speed is determined by the inter- and intra-subband relaxation of the carriers in the conduction subband. The modulation speed at 1.1 μm due to an ISB-resonant pump light at 1.95 μm has been observed to be 1.4 ps at excitation energy of 500 fJ/μm2. |
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