Issues in the realization of strained-layer quantum well optoelectronic devices

Ion-beam processing is the ideal complement to modern lattice-mismatched (strained-layer) heteroepitaxy for optoelectronic device fabrication. Bandstructure engineering of optoelectronic devices through the use of lattice strain is presented, and the effects of ion-beam processing on III–V strained-layer heteroepitaxial structures are summarized. Representative results from ion-implanted optoelectronic devices are presented to illustrate these principles.