Neodimium laser pulse annealing and decomposition of ion-implanted GaAs

Summary The amorphous-to-single crystal transition induced by high-power Nd laser pulse has been studied in ion-implanted GaAs by taking advantage of the high-absorption coefficient of amorphous material. A threshold energy density of about 0.8 J/cm² has been measured for both 50 keV Te⁺ and 100 Ar⁺ implants. Channelling effect and X-ray photoelectron spectroscopy techniques indicate that no appreciable As loss occurs in a narrow energy density window just above threshold. High-energy densities cause instead As loss from the near surface region. Visiting scientist on the basis of I.N.F.N. Academia Sinica cultural exchange plan.