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High-pressure behavior of the bond-bending mode of AIN
Authors:E V Yakovenko  M Gauthier  A Polian
Institution:(1) Institute for High-Pressure Physics, Russian Academy of Sciences, Troitsk, Moscow oblast, 142190, Russia;(2) Physique des Milieux Condensés, Université P&M Curie, F 75252 Paris Cedex 05, France
Abstract:Lattice vibrations of the wurtzite-type AIN have been studied by Raman spectroscopy under high-pressure up to the phase transition to the rock salt structure at 20 GPa. Five fundamental bands E 2 2 , A1(TO), E1(TO), A1(LO), and E1(LO) have a strong, positive pressure shift, whereas the shift of the low-frequency E 2 1 band is weakly positive. We have found that the bond-bending mode has a positive mode Grüneisen parameter γi = 0.04, which is qualitatively consistent with the recently reported value γi = 0.12 21]. Thus, we confirm that AIN remains stable with respect to the bond-bending mode, while in most tetrahedral semiconductors, bond-bending modes soften on compression. Experimental results are compared with the first-principle calculations.
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