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Time-evolution of the GaAs(0 0 1) pre-roughening process |
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| Authors: | Z Ding D W Bullock P M Thibado V P LaBella Kieran Mullen |
| Institution: | a Department of Physics, The University of Arkansas, Physics Building, Room 220, Fayetteville, AR 72701, USA b School of NanoSciences and NanoEngineering, University at Albany-SUNY, Albany, NY 12203, USA c Department of Physics and Astronomy, The University of Oklahoma, Norman, OK 73019, USA |
| Abstract: | The GaAs(0 0 1) surface is observed to evolve from being perfectly flat to a surface half covered with one-monolayer high spontaneously formed GaAs islands. The dynamics of this process are monitored with atomic-scale resolution using scanning tunneling microscopy. Surprisingly, pit formation dominates the early stages of island formation. Insight into the nucleation process is reported. |
| Keywords: | Scanning tunneling microscopy Surface roughening Surface structure morphology roughness and topography Gallium arsenide Surfaces defects |
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