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Adatom concentration on GaAs(001) during MBE annealing |
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| Authors: | M D Johnson K T Leung A Birch B G Orr J Tersoff |
| Institution: | a The Harrison M. Randall Laboratory, University of Michigan, Ann Arbor, MI 48109-1120, USA b IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, NY 10598, USA |
| Abstract: | We study the concentration of adatoms on GaAs(001) during annealing under MBE conditions. By rapidly cooling the sample from typical growth temperatures and typical As overpressures, the thermal concentration of adatoms can be frozen into small islands on the terraces. The area of the resulting islands is measured with STM far from terrace steps, giving an estimate of the concentration of adatoms during equilibrium. We find that a surprisingly large concentration of adatoms is present for typical growth temperatures, e.g. 0.18 monolayer at 600°C. Possible consequences for current growth models are discussed. |
| Keywords: | Arsenic Epitaxy Equilibrium thermodynamics and statistical mechanics Evaporation and sublimation Gallium Gallium arsenide Low index single crystal surfaces Models of surface chemical reactions Models of surface kinetics Molecular beam epitaxy Reflection high-energy electron diffraction (RHEED) Scanning tunneling microscopy Semiconducting surfaces Surface chemical reaction Surface thermodynamics |
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