Interaction kinetics of As4 and Ga on {100} GaAs surfaces using a modulated molecular beam technique |
| |
Authors: | CT Foxon BA Joyce |
| |
Institution: | Mullard Research Laboratories, Redhill, Surrey RH1 5HA, England |
| |
Abstract: | A modulated molecular beam technique, using mass spectrometric detection of desorbed species, had been applied to a study of the kinetics of Ga and As4 interactions on {100} GaAs surfaces. Time domain mass spectrometer signals were processed using fourier transform techniques to provide information on surface lifetimes, sticking coefficients, desorption energies and reaction orders. In the temperature range 300–450 K As4 is nondissociatively chemisorbed on Ga atoms from a weakly bound precursor state, but above 450 K there is a pairwise dissociation-recombination reaction between As4 molecules adsorbed on adjacent Ga lattice sites. At temperatures higher than 600 K a temperature dependent Ga adatom population is formed by the desorption of As2 from the surface. Thus above 450 K it is possible to produce GaAs from beams of the elements, but below this temperature the compound does not form. |
| |
Keywords: | |
本文献已被 ScienceDirect 等数据库收录! |
|