Department of Chemistry, University of Missouri–Columbia Columbia, MO 65211, USA
Abstract:
The adsorption and decomposition of monoethylgermane (GeH3Et) on the Si(100)-(2×1) surface was investigated with the intent of elucidating the surface processes leading to the deposition of germanium. The low-temperature adsorption of the molecule was explored, as well as its thermal decomposition. H2 and C2H4 are observed as the desorption products in temperature-programmed desorption experiments. The ethylene is produced by a hydride elimination reaction within the adsorbed ethyl groups. The amount of Ge which can be deposited in a reaction cycle is correlated with the number of sites occupied by the ethyl groups upon the dissociation of GeH3Et.