Room temperature hydrogenation of the Si(001)2 × 1 surface studied by angle-resolved electron energy loss spectroscopy

We observed the hydrogen adsorption on the Si(001)2 × 1 surface achieved at room temperature by angle-resolved electron energy loss spectroscopy (AR-ELS) and elastic low-energy electron diffraction. From measurements of the intensities of elastically diffracted beams, we found a characteristic hydrogen covered surface (called Si(001)2 × 1H(RT) surface in this paper), where all the diffracted beam intensities were enhanced drastically and a sharp 2 × 1 LEED pattern was observed. The angular dependence of the elastically diffracted beams on the 2 × 1H(RT) surface was different from that on the monohydride 2 × 1:H surface. On the 2 × 1H(RT) surface the S₃, transition from the back bond surface state disappeared in contrary to the 2 × 1:H surface and two hydrogen induced transitions were observed at 7.0 and 8.0 eV in AR-ELS spectra. We revealed that the 2 × 1H(RT) surface consisted of the monohydride and the dihydride phases with comparable weights. Additionally, we found the new transition S'₁, ascribed to the newly produced dangling bond surface state due to the rupture of the dimerization bond with hydrogen adsorption.