Effects of ion damage on the surface of ITO films during plasma treatment |
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| Authors: | Hyunjung Shin Chanhyung Kim Jang-Sik Lee Sunghan Kim |
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| Institution: | a Center for Materials and Processes of Self-Assembly and School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Republic of Korea
b DuPont Display, 6780 Cortona Dr., Santa Barbara, CA 93117, USA |
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| Abstract: | During a surface treatment using CF4/O2 gas plasma, energetic ions affected the defect structures on the top surface of ITO thin films. C-AFM and local I-V measurements showed the formation of the depleted layer after a plasma treatment with a bias of 20 W; XPS showed the creation of new defect structures. Donor concentration in the damaged top surface of the ITO films was found to be decreased. Sn-based neutral defect complexes and reduced oxygen, which could trap the electrons, have been proposed to be formed. This can also explain the increase of the work function of ITO. |
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| Keywords: | Ion damage ITO Conducting atomic force microscopy |
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