Room temperature fabrication Oxide TFT with Y2O3 as a gate oxide and Mo contact

In this investigation, an operating voltage as low as 5 V has been achieved for Oxide TFT with Y₂O₃ as a gate oxide and a-IGZO as an active layer. The OTFT has been fabricated at room temperature using RF sputter. The mobility and threshold voltages are 11.3 cm²/V s and 3.4 V for the device with W/L = 0.8, respectively. The annealing at 400 °C in N₂ containing 5% H₂ ambient has been utilized to improve the electrical performance of TFT. The on-off current which is determined by gate dielectric has been observed to be 10⁴. It has also been observed that the dielectric properties of gate oxide deteriorate on annealing. The dielectric constant of Y₂O₃ is observed in the range between 5.1 and 5.4 measured on various devices.