The fabrication and characterization of ZnO UV detector

ZnO films were deposited on GaAs substrates by radio frequency (rf) magnetron sputtering followed by an ambient-controlled heat treatment process for arsenic doping. In Hall measurements, the As-doped ZnO films showed the characteristics of p-type semiconductor. The ZnO thin film p–n homojuctions were then fabricated to investigate the electrical properties of the films. The p–n homojunctions exhibited the distinct rectifying current–voltage (I–V) characteristics. The turn-on voltage was measured to be 3.0 V under the forward bias. When ultraviolet (UV) light (λ = 325 nm) was irradiated on the p–n homojunction, photocurrent of 2 mA was detected. Based on these results, it is proposed that the p–n homojunction herein is a potential candidate for UV photodetector and optical devices.