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Electrical and optical properties of Ga doped zinc oxide thin films deposited at room temperature by continuous composition spread |
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| Authors: | Keun Jung Won-Kook Choi Hyun Jae Kim |
| Institution: | a Electronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea b Opto-electronic Materials Center, Korea Institute of Science and Technology, 39-1, Hawolgok-dong, Sungbuk-gu, Seoul 136-791, Republic of Korea c School of Electrical and Electronic Engineering, Yonsei University, 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Republic of Korea |
| Abstract: | Ga doped ZnO (GZO) thin films were deposited on glass substrates at room temperature by continuous composition spread (CCS) method. CCS is thin films growth method of various GaxZn1−xO(GZO) thin film compositions on a substrate, and evaluating critical properties as a function position, which is directly related to material composition. Various compositions of Ga doped ZnO deposited at room temperature were explored to find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 1.46 × 10−3 Ω cm and an average transmittance above 90% in the 550 nm wavelength region were able to be formed at an Ar pressure of 2.66 Pa and a room temperature. Also, optimized composition of the GZO thin film which had the lowest resistivity and high transmittance was found at 0.8 wt.% Ga2O3 doped in ZnO. |
| Keywords: | Continuous composition spread Transparent conducting oxides Ga doped ZnO Thin film |
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