Experimental determination of valence band offset at PbTe/Ge(1 0 0) interface by synchrotron radiation photoelectron spectroscopy |
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| Authors: | CF Cai JX Si Y Xu |
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| Institution: | a Department of Physics, State Key Laboratory for Modern Optical Instruments, Zhejiang University, Hangzhou, Zhejiang, 310027, China
b National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei, Anhui, 230029, China |
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| Abstract: | The band offset at the interface of PbTe/Ge (1 0 0) heterojunction was studied by the synchrotron radiation photoelectron spectroscopy. A valence band offset of ΔEV = 0.07 ± 0.05 eV, and a conduction band offset of ΔEC = 0.27 ± 0.05 eV are concluded. The experimental determination of the band offset for the PbTe/Ge interface should be beneficial for the heterojunction to be applied in new optoelectronic and electronic devices. |
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| Keywords: | SRPES PbTe/Ge heterojunction Band offsets |
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