|
|||||
|
|
Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films |
|
| Authors: | Shiu-Jen Liu Shih-Hao SuHau-Wei Fang Jang-Hsing HsiehJenh-Yih Juang |
| Institution: | a Department of Mathematics and Science (Precollege), National Taiwan Normal University, Linkou, Taipei 244, Taiwan b Department of Electrophysics, National Chiao Tung University, Hsinchu 300, Taiwan c Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 300, Taiwan d Department of Materials Engineering, Mingchi University of Technology, Taishan, Taipei 243, Taiwan |
| Abstract: | Amorphous thin films of InGaZnO4 (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 °C and 150 °C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism. |
| Keywords: | Amorphous transparent conducting oxide Diluted magnetic semiconductor Indium gallium zinc oxide films Cr doping |
| 本文献已被 ScienceDirect 等数据库收录！ | |