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Simplified method to prepare atomically-ordered TiO2(1 1 0)-(1 × 1) surfaces with steps and terraces |
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| Authors: | Ryota Shimizu Katsuya IwayaTakeo Ohsawa Tetsuya HasegawaTomihiro Hashizume Taro Hitosugi |
| Institution: | a WPI-Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan b Department of Chemistry, The University of Tokyo, Bunkyo, Tokyo 113-0033, Japan c Advanced Research Laboratory, Hitachi, Ltd., Saitama 350-0395, Japan d Department of Physics, Tokyo Institute of Technology, Meguro, Tokyo 152-8551, Japan |
| Abstract: | An effective way to prepare atomically-ordered rutile TiO2(1 1 0) surfaces that have distinct step and terrace structures suitable for oxide thin film deposition is demonstrated. Only a two-step procedure, consisting of 20% HF etching and UHV-annealing at 1100 °C, was required to yield a clean (1 × 1) structure with step and terrace structures. Investigation of the surface using scanning tunneling microscopy, low-energy electron diffraction, and Auger electron spectroscopy reveals that carbon contamination is removed at around 800 °C, and straight steps with clear terraces appear at around 1000 °C. |
| Keywords: | Oxide electronics Surface science Scanning probe microscopy TiO2(1 1 0) |
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