Nanoembossing and piezoelectricity of ferroelectric Pb(Zr0.3,Ti0.7)O3 nanowire arrays |
| |
| Authors: | ZK ShenZH Chen H LiXP Qu Y Chen R Liu |
| |
| Institution: | a ASIC & System State Key Laboratory, Department of Microelectronics, Fudan University, Shanghai 200433, China
b Rutherford Appleton Laboratory, Chilton, Didcot, Oxfordshire OX11 0QX, UK |
| |
| Abstract: | Arrays of ferroelectric PZT nanowires with lateral size down to 200 nm were fabricated by nanoembossing technology. Structural characterization of the embossed PZT film was studied by Raman spectroscopy. Multidomain configurations of a single nanowire have been explored by vertical mode piezoresponse force microscopy (VPFM). The local electric polarization of the individual ferroelectric nanowire has also been investigated. Excellent ferroelectric and piezoelectric characteristics observed in the embossed PZT nanowires suggest nanoembossing technique proposed in this work is promising to become a useful method for ferroelectric nanowires fabrication. |
| |
| Keywords: | Nanoembossing Ferroelectric PZT nanowire Piezoelectric Domain |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
