Relatively low temperature synthesis of graphene by radio frequency plasma enhanced chemical vapor deposition |
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Authors: | JL Qi WT Zheng XH ZhengX Wang HW Tian |
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Institution: | a State Key Laboratory of Advanced Welding Production Technology, Department of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, People's Republic of China b Department of Materials Science, Key Laboratory of Mobile Materials, MOE, and State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China |
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Abstract: | We present a simple, low-cost and high-effective method for synthesizing high-quality, large-area graphene using radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) on SiO2/Si substrate covered with Ni thin film at relatively low temperatures (650 °C). During deposition, the trace amount of carbon (CH4 gas flow rate of 2 sccm) is introduced into PECVD chamber and the deposition time is only 30 s, in which the carbon atoms diffuse into the Ni film and then segregate on its surface, forming single-layer or few-layer graphene. After deposition, Ni is removed by wet etching, and the obtained single continuous graphene film can easily be transferred to other substrates. This investigation provides a large-area, low temperature and low-cost synthesis method for graphene as a practical electronic material. |
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Keywords: | PECVD Low temperature Graphene |
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