Ultraviolet photoconductive detector based on Al doped ZnO films prepared by sol-gel method |
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| Authors: | Zi-Qiang Xu Juan Xie Xiao-Tao Zu |
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| Institution: | a School of Microelectronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
b School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | We report a study on the fabrication and characterization of ultraviolet photodetectors based on ZnO:Al films. Using sol-gel technique, highly c-axis oriented ZnO films with 5 mol% Al doping were deposited on Si(1 1 1) substrates. The photoconductive UV detectors based on ZnO:Al thin films, having a metal-semiconductor-metal (MSM) structure with interdigital (IDT) configuration, were fabricated by using Au as a contact metal. The characteristics of dark and photocurrent of the UV detector and the UV photoresponse of the detector were investigated. The linear current-voltage (I-V) characteristics under both forward and reverse bias exhibit ohmic metal-semiconductor contacts. Under illumination using monochromatic light with a wavelength of 350 nm, photo-generated current was measured at 58.05 μA at a bias of 6 V. The detector exhibits an evident wide-range spectral responsivity and shows a trend similar to that in transmittance and photoluminescence spectrum. |
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| Keywords: | 61 72 Vv 73 50 Pz 73 61 Ga 85 60 Gz |
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