Oxidation of epitaxial Y(0 0 0 1) films |
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Authors: | M Ay HW Becker H Zabel |
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Institution: | a Laboratory for Neutron Scattering ETH & PSI, Paul Scherrer Institut, CH-5232 Villigen PSI, Switzerland b San Jose Research Center, Hitachi Global Storage Technologies, San Jose, CA 95135, USA c Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für Ionenstrahlphysik, 44780 Bochum, Germany d Department of Physics, Uppsala University, S-751 21 Uppsala, Sweden e Ruhr-Universität Bochum, Fakultät für Physik und Astronomie, Institut für experimentelle Festkörperphysik, 44780 Bochum, Germany |
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Abstract: | We have investigated the oxidation behavior of MBE grown epitaxial Y(0 0 0 1)/Nb(1 1 0) films on sapphire substrates at elevated temperatures under atmospheric conditions with a combination of experimental methods. At room temperature X-ray diffraction (XRD) reveals the formation of a 25 Å thick YOxHx layer at the surface, while simultaneously oxide growth proceeds along defect lines normal to the film plane, resulting in the formation of a single crystalline cubic Y2O3 (2 2 2) phase. Furthermore, nuclear resonance analysis (NRA) reveals that hydrogen penetrates into the sample and transforms the entire Y film into the hydride YH2 phase. Additional annealing in air leads to further oxidation radially out from the already existing oxide channels. Finally material transport during oxidation results in the formation of conically shaped oxide precipitations at the surface above the oxide channels as observed by atomic force microscopy (AFM). |
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Keywords: | Oxidation X-ray scattering Nuclear resonance analysis |
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