Defects related room temperature ferromagnetism in p-type (Mn, Li) co-doped ZnO films deposited by reactive magnetron sputtering |
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| Authors: | CW Zou HJ Wang M Li LP Guo TW Kang |
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| Institution: | a Accelerator Laboratory, Department of Physics and Key Laboratory of Acoustic Photonic Materials and Devices of Ministry of Education, Wuhan University, Wuhan 430072, China
b Quantum Functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea |
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| Abstract: | We report on the defects related room temperature ferromagnetic characteristics of Zn0.95-xMnxLi0.05O (x = 0.01, 0.03, 0.05 and 0.08) thin films grown on glass substrates using reactive magnetron sputtering. By increasing the Mn content, the films exhibited increases in the c-axis lattice constant, fundamental band gap energy, coercive field and remanent magnetization. Comparison of the structural and magnetic properties of the as-deposited and annealed films indicates that the hole carriers, together with defects concentrations, play an important role in the ferromagnetic origin of Mn and Li co-doped ZnO thin films. The ferromagnetism in films can be described by bound magnetic polaron models with respect to defect-bound carriers. |
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| Keywords: | Ferromagnetism Thin films Reactive magnetron sputtering ZnO |
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