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Study of interfacial reactions and phase stabilization of mixed Sc, Dy, Hf high-k oxides by attenuated total reflectance infrared spectroscopy |
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| Authors: | A Hardy C Adelmann H Van den Rul MK Van Bael S De Gendt M D’Olieslaeger M Heyns JA Kittl |
| Institution: | a Hasselt University, Inorganic and Physical Chemistry - IMO, Diepenbeek, Belgium b IMEC vzw, Division IMOMEC, Diepenbeek, Belgium c IMEC vzw, Heverlee, Belgium d Hasselt University, Institute for Materials Research, Diepenbeek, Belgium e KULeuven, Department of Chemistry, Heverlee, Belgium |
| Abstract: | Grazing angle attenuated total reflectance Fourier transform infrared spectroscopy is applied to study ultrathin film Hf4+, Sc3+ and Dy3+oxides, due to its high surface sensitivity. The (multi)metal oxides studied, are of interest as high-k dielectrics. Important properties affecting the permittivity, such as the amorphous or crystalline phase and interfacial reactions, are characterized.Dy2O3 is prone to silicate formation on SiO2/Si substrates, which is expressed in DyScO3 as well, but suppressed in HfDyOx. Sc2O3, HfScOx and HfO2 were found to be stable in contact with SiO2/Si. Deposition of HfO2 in between Dy2O3 or DyScO3 and SiO2, prevents silicate formation, showing a buffer-like behavior for the HfO2.Doping of HfO2 with Dy or Sc prevents monoclinic phase crystallization. Instead, a cubic phase is obtained, which allows a higher permittivity of the films. The phase remains stable after anneal at high temperature. |
| Keywords: | ATR-FTIR Hafnia Scandate Rare earth High permittivity |
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