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The influence of the DX center on the capacitance of schottky barriers in n-type AlGaAs |
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| Authors: | C Ghezzi R Mosca A Bosacchi S Franchi E Gombia |
| Institution: | Dipartimento di Fisica, Università degli Studi di Parma, Viale delle Scienze, 43100, Parma, Italy Istituto MASPEC-CNR, Via Chiavari 18/A, 43100, Parma, Italy |
| Abstract: | The significance of both the density N, and the apparent built-in voltage Va, as usually obtained from C-V measurements on Schottky barriers containing DX centers, is clarified. It is also shown that, owing to the non-equilibrium occupancy of the DX center, at low temperature the electron density in the flat-band region depends on the cooling rate of the sample. |
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