A newly investigated approach for the control of tunnel resistance of nanogaps using field-emission-induced electromigration |
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| Authors: | Kazutoshi TakiyaYusuke Tomoda Watari KumeShunsuke Ueno Takato WatanabeJunichi Shirakashi |
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| Institution: | Department of Electrical and Electronic Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan |
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| Abstract: | We report a newly investigated approach for the control of the tunnel resistance of nanogaps using field-emission-induced electromigration (“activation”), in order to decrease the power consumption during the process. The method is demonstrated by applying a bias current to initial nanogaps using a current source. As a result, a wide range control of the tunnel resistance of the nanogaps was achieved by performing the current-source-based activation. Furthermore, the average power could be successfully suppressed in comparison with that of the voltage-source-based activation. These results indicate that the current-source-based activation is suitable for the tuning of the tunnel resistance of nanogaps. |
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| Keywords: | Nanogap Electromigration Current source Field emission current Average power Moving atom |
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